@article {1346954,
	title = {The Rate of Charge Tunneling in EGaln Junctions is not Sensitive to Halogen Substituents at the SAM//Ga2o3 Interface},
	journal = {ACS Nano},
	volume = {12},
	year = {2018},
	note = {1314},
	pages = {10221-10230},
	author = {Baghbanzadeh, M. and Pieters, P. F. and Y. Li and Collison, D. and Whitesides, G. M.}
}
