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Fabrication of GaAs/AlGaAs High Electron Mobility Transistors with 250 nm Gates Using Conformal Phase Shift Lithography

Citation:

J. Hu, T. Deng, R. G. Beck, R. M. Westervelt, K. D. Maranowski, A. C. Gossard, and G. M. Whitesides. 2000. “Fabrication of GaAs/AlGaAs High Electron Mobility Transistors with 250 nm Gates Using Conformal Phase Shift Lithography.” Sensor Actuat. A-Phys., 86, Pp. 122-126.
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See also: MATERIALS SCIENCE, Materials, PDMS, Polymers: PDMS, Conducting Solids, AMPs, PDMS, Soft Lithography, Devices and Structures, Optical Systems
Last updated on 01/10/2019