Citation:
M. Baghbanzadeh, P. F. Pieters, Y. Li, D. Collison, and G. M. Whitesides. 2018. “The Rate of Charge Tunneling in EGaln Junctions is not Sensitive to Halogen Substituents at the SAM//Ga2o3 Interface.” ACS Nano, 12, Pp. 10221-10230.
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