Citation:
K. S. Johnson, K. K. Berggren, A. J. Black, C. T. Black, A. P. Chu, N. H. Dekker, D. C. Ralph, J. H. Thywissen, R. Youkin, M. G. Prentiss, M. Tinkham, and G. M. Whitesides. 1996. “Using Neutral Metastable Argon Atoms and Contamination Lithography to Form Nanostructures in Silicon, Silicon Dioxide, and Gold.” Applied Physics Letters, 69, Pp. 2773-2775.
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